CAS NO:27804-64-4 BDEAS/Bis(diethylamino)silane

BDEAS is an amino silane precursor used for depositing silicon oxide films in ALD processes. Similar to other amino silanes, BDEAS can also achieve efficient deposition in ALD processes and produce silicon oxide films with high breakdown field strength at lower temperatures.

BDEAS is a highly volatile amino-silicon precursor with moderate vapor pressure and good thermal stability. It has excellent compatibility with reactive gases such as ozone and plasma. The reaction activity is controllable, the deposition window is wide, the film formation is uniform and dense with low impurity content, and high-quality SiO₂ and SiON films can be prepared at low temperatures. It is sensitive to water vapor and is suitable for the preparation of semiconductor dielectric layers and passivation layers in advanced manufacturing processes. It is the mainstream silicon source precursor for ALD processes in high-end chips.

Semiconductor Industry: ALD deposition of SiO₂ and SiON dielectric & passivation layers for logic and memory chips.

Advanced Packaging Industry: Insulating passivation films for Chiplet and wafer-level packaging.

Display Panel Industry: Insulation layer deposition for TFT thin film transistors.

MEMS Industry: Dielectric insulating films for micro sensors and micro devices.

Optical Film Industry: Precision optical coating and low-loss dielectric films.

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