CAS NO:14405-43-7 Gallium(III) Acetylacetonate

CAS NO:14405-43-7 Gallium(III) acetylacetonate  It has a variety of specific applications in industry and scientific research, mainly as a high-purity precursor material and catalyst.

Why is gallium acetylacetonate as a core precursor for thin film deposition?

1.Excellent solubility and compatibility: As an organogallium salt precursor, it is readily soluble in solvents such as acetic acid, and can be formulated into anhydrous precursor solutions to meet the needs of multi-process preparation.

2.Excellent process compatibility: With suitable melting point and volatility, it is precisely matched to CVD and ALD processes, enabling uniform film deposition and atomic-level control.

3.Strong technological extensibility: It provides precise gallium sources for wide bandgap thin films such as GaN and Ga2O3, and connects metal gallium epitaxy and deposition processes.
 

1. Semiconductor and optoelectronic thin film preparation;
2. Nanomaterials and Photocatalytic Synthesis;
3. Application of New Energy Battery Materials
4. Manufacturing of perovskite solar cells;
5. Nanowire Synthesis and Chemical Catalysis

As a precursor source for CVD(Chemical Vapor Deposition)/ALD(Atomic Layer Deposition), it can be used for chemical vapor deposition and atomic layer deposition of thin film materials.

Semiconductor-specific thin film precursors exhibit uniform and stable thermal decomposition. They are primarily used for the preparation of gallium nitride and gallium oxide thin films, adapting to chip and light-emitting device coating processes. They can also be used for catalysis in special organic synthesis.

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